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KAIST PIM반도체설계연구센터 이론 교육
회원 개인정보 추가 작성 요청
KAIST AI-PIM PIM반도체연구센터

IP 검색

DRAM Redundancy

• The proposed redundancy mechanism is designed to ensure reliable MAC operations in analog PIM macros by addressing MDRT (MAC Data Retention Time) failures, which are not covered by conventional techniques. A Spare_enable signal activates the redundancy controller only when a failure address is detected. The Decoder (DEC) generates MUX_select signals, which determine whether each MAC output comes from the core row or the spare row. Under normal operation, all MUXes pass the original core outputs to the adder. When a failure address is matched, the corresponding MUX switches its input to the spare MAC row, and the Spare_bit logic ensures that only the failed row is redirected. This allows accurate delivery of MAC results with proper bit-position alignment, preserving output integrity even in the presence of retention failures.
In contrast, previous methods suffer from several limitations:
• Conventional redundancy schemes such as spare row/column replacement or I/O line shifting focus only on CDRT (Cell Data Retention Time) failures and cannot detect or repair MDRT-related issues.
• In bit-position-sensitive MAC operations, shifting-based repair corrupts the alignment between MAC outputs and digital bit positions, leading to incorrect accumulation results.
• Previous methods rely on external failure maps and lack the ability to dynamically reflect MAC-specific degradation patterns within the compute path.
Therefore, the proposed approach provides in-situ MDRT repair with bit-position fidelity, overcoming both detection and precision limitations of earlier techniques.

Feature
· • Detects and repairs MAC Data Retention Time (MDRT) failures, which conventional redundancy methods cannot handle
· • Incorporates a bit-position-aware redundancy technique to maintain accurate digital outputs
· • Includes spare MAC ports (rows) and an internal repair controller (MUX, DEC, spare bit logic)
· • Operates in two modes:
· Normal Mode: core output directly connected to the adder
· Repair Mode: faulty row output bypassed and replaced with spare row output via MUX
· • Enables bit-accurate repair by selecting the correct data path based on failure address input
Application
· • Adopted in Samsung 28nm CMOS process based 4T1C DRAM-PIM macro
Business Area
DRAM memory system
Category

Verification IP > Memory > Dram


Tech Specs
  • IP Name :

    DRAM Redundancy

  • Provider :

    정성욱 교수님, 김도한

  • Foundry :

    SAMSUNG

  • Technology :

    28nm

Deliverables
· Schematic netlist & GDS
Validation Status
· Post-layout Simulation
Availability
1Ynm DRAM Technology
Functional Diagram
Benefits
·
List