• The proposed sense amplifier, named the Static Current-Free Pre-Sensing IO Sense Amplifier (SCFP-IOSA), is a high-speed, low-power sensing solution for DRAM global I/O in 28 nm CMOS technology. It employs a direct input transfer architecture using a single coupling capacitor (CC) and introduces a static current-free pre-sensing technique to minimize offset voltage (V_OS), area, and energy overhead. Unlike conventional offset cancellation (OC)-based I/O sense amplifiers, which suffer from input voltage attenuation, large area due to dual CCs, and static current during sensing, SCFP-IOSA eliminates attenuation by directly transferring the input differential voltage (ΔV_GIO) and avoids static current using exponential RC pre-amplification. The proposed design separates ΔV_GIO generation and sensing by GIO switches, allowing simultaneous offset cancellation and input development. This reduces sensing time overhead and enables a fast sensing time of 3.75 ns, with 2.15 μW power consumption, and 10.28 μm² area, achieving 3× lower σV_OS, 2.9× lower power, and 4.46× smaller area compared to state-of-the-art OC-IOSA. Moreover, it shows robust sensing yield even in noisy conditions, and maintains performance at low supply voltages. These characteristics make SCFP-IOSA highly suitable for next-generation low-voltage, high-density DRAM applications, particularly in 1Ynm-class or beyond.