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Supply regulator

The “Supply regulator” is a fully integrated NMOS-based linear regulator designed for ultra-low input voltage operation. The core of the LDO comprises an NMOS pass transistor, an error amplifier (EA), and a charge pump-based gate voltage booster known as the invert-phase synchronized self-oscillating charge pump (I-SOCP). This architecture enables the system to regulate output voltage with a dropout voltage well below the threshold voltage of the pass transistor, even under supply voltages below 1V.
The NMOS pass transistor is driven by a gate voltage (VG) generated by the I-SOCP, which operates without an external clock and maintains VG above the input voltage. This elevated VG allows the NMOS transistor to enter the triode region and minimize the dropout voltage. Simultaneously, the I-SOCP output is used as the supply for the EA, thereby ensuring adequate headroom and linear regulation even under sub-1V input conditions.
Unlike conventional LDOs with step-up charge pumps, the proposed architecture does not require large flying or output capacitors. Instead, the gate capacitance of the pass transistor is used directly, reducing area and power overhead. The I-SOCP operates in a self-oscillating and phase-synchronized manner, which improves the voltage boosting capability by enabling both rising and falling edge operations of internal nodes.
This NMOS LDO is ideal for low-power SoC platforms where minimal dropout and high efficiency under low voltage supplies are critical. Its fully analog regulation, self-oscillating clock generation, and compact capacitor-less boosting structure make it suitable for integration in advanced battery-powered systems.

Feature
· • Fully integrated analog NMOS LDO
· – Output-capacitorless architecture with no need for external clock, reference, or bias circuitry
· • Ultra-low dropout operation
· – Minimum dropout voltage (VDO) of 20 mV enables efficient low-voltage regulation
· • Wide input voltage range
· – Supports VIN from 0.45 V to 1.0 V, suitable for near-threshold systems
· • Invert-phase synchronized self-oscillating charge pump (I-SOCP)
· – Generates VG > VIN without external components or clock input
· • Boosted error amplifier supply
· – Maintains high loop gain under sub-1 V VIN by using VG as EA supply
· • High power efficiency
· – Achieves up to 97.92% efficiency at VIN = 1.0 V and VDO = 20 mV
· • Wide load current capability
· – Supports up to 42.4 mA load current under low-VDO conditions
· • Fast start-up behavior
· – Autonomous start-up time within approximately 5 ms
· • Excellent load regulation
· – Measured load regulation as low as 94.5 mV/A at VIN = 800 mV
· • Compact silicon footprint
· – Total core area of 0.016 mm² in 28 nm CMOS process
Application
· Process-In-Memory Application (ex. Power management for analog computing-based CNN layer and digital
Business Area
Automotive Radar or LiDAR system, Memory system
Category

Analog & Mixed Signal > Power Management > Voltage Regulator


Tech Specs
  • IP Name :

    Supply regulator

  • Provider :

    Woojin Jang, Junghyup Lee

  • Foundry :

    SAMSUNG

  • Technology :

    28nm

Deliverables
· Schematic netlist, layout and testbench
Validation Status
· Silicon proven
Availability
Samsung 28nm Only
Functional Diagram
Benefits
·
List