The analog memory stores data using a 1T1C(SWR , Cmem) structure, similar to that of DRAM. To prevent data destruction during read operations, the write and read ports are physically separated. A storage capacitor is placed between these ports, and a source-follower buffer is used to sense the stored voltage without disturbing it. The source-follower consists of an NMOS(M1) input transistor and a current source(M2) biased by an analog voltage(VB). To enhance throughput by 3×, three read switches(SRD0, SRD1, SRD2) are connected to the output of the source-follower. The circuit operates from a 0.9 V to 1.1 V supply and supports an input voltage range of 0.2 V to 0.8 V. It functions reliably over a –20 °C to 85 °C temperature range and can be effectively used in energy-efficient analog in-memory computing (IMC) applications.